NPN Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
SDT7B04
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.) ·DC Current Gain-
: hFE= 20~250(Min.)@IC= 2.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B&W TV horizontal output,regulated power
supply and power ampl...
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