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2SA1386A

PNP Transistor

Description

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RA...

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