isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High forward current transfer ratio hFE ·Low collector to emitter saturation voltage VCE(sat) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplification ·Optimum for 120W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)...
