isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SA1073 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulato...