DatasheetsPDF.com

2SC3061

Part Number	2SC3061
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC3061 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min) ...
Datasheet	2SC3061 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3061 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic generators ·Class C and D amplifiers ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 850 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=...

Similar Datasheet

2SC3000 NPN Epitaxial Planar Silicon Transistor - Sanyo Semicon Device
2SC3001 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3006 Silicon NPN epitaxial planer type Transistor - Toshiba Semiconductor
2SC3007 Silicon NPN Epitaxial Type Transistor - Toshiba
2SC3011 Silicon NPN epitaxial planer Transistor - Toshiba Semiconductor
2SC3011 Silicon NPN Epitaxial Transistor - Kexin
2SC3012 NPN Transistor - INCHANGE
2SC3012 Silicon power Transistor - SavantIC
2SC3017 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3018 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)