NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for high definition CRT display horizontal
deflection output applications.
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