NPN Transistor
Description
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A
·Good Linearity of hFE ·Complement to Type 2SA1386/A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATIN...
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