NPN Transistor
Description
isc Silicon NPN Power Transistor
2SC3557
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
A...
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