NPN Transistor
Description
isc Silicon NPN Power Transistor
2SC3559
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.
ABSOLUTE MAXIMU...
Similar Datasheet