isc Silicon NPN Power Transistor
DESCRIPTION ·High Speed Switching ·High Collector-Base Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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