NPN Transistor
Description
isc Silicon NPN Power Transistor
2SD819
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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