NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 0.5A ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio frequency power amplifier
applic...
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