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2SD1023

Part Number	2SD1023
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1023 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 20...
Datasheet	2SD1023 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1023 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpoe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous 0.
5 A IBM Base Current-Peak PC Collector Power Dissipation @ T...

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