NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Complement to Type 2SB1383 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for driver of solenoid, motor and general
p...
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