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BDX34

INCHANGE
Part Number BDX34
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 23, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor BDX34 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V...
Datasheet PDF File BDX34 PDF File

BDX34
BDX34

Overview
isc Silicon PNP Darlington Power Transistor BDX34 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.
5V(Max.
)@ IC= -4A ·Complement to Type BDX33 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
25 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.
iscsemi.
com MAX UNIT 1.
78...


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