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BDX37

Part Number	BDX37
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor BDX37 DESCRIPTION ·High Current Capability-IC= 5A(DC) ·DC Current Gain— : hFE = 45-45...
Datasheet	BDX37 PDF File

Overview

isc Silicon NPN Power Transistor BDX37 DESCRIPTION ·High Current Capability-IC= 5A(DC) ·DC Current Gain— : hFE = 45-450(Min) @ IC= 0.
5 A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V(Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-current switching in power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBM Base Current-Peak Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC≤ 75℃ ...

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