PNP Transistor
Description
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -120V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATIN...
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