DatasheetsPDF.com

MJ11012

Part Number	MJ11012
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(M...
Datasheet	MJ11012 PDF File

Overview

isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.
0V(Max.
)@ IC= 20A ·Complement to the PNP MJ11011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 30 A ICM Collector ...

Similar Datasheet

MJ11011 PNP Transistor - INCHANGE
MJ11012 30 AMPERE DARLINGTON POWER TRANSISTORS - Motorola Inc
MJ11012 High-Current Complementary Silicon NPN Transistors - ON Semiconductor
MJ11012 NPN Transistor - DIGITRON
MJ11012 NPN Transistor - INCHANGE
MJ11013 DARLINGTON POWER TRANSISTORS - ON Semiconductor
MJ11013 30 AMPERE DARLINGTON POWER TRANSISTORS - Motorola Inc
MJ11013 POWER TRANSISTOR - Inchange Semiconductor
MJ11014 30 AMPERE DARLINGTON POWER TRANSISTORS - Motorola Inc
MJ11014 DARLINGTON POWER TRANSISTORS - ON Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)