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2SC1113

Part Number	2SC1113
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1113 DESCRIPTION ·High Current Capacity ·Wide area of safe ...
Datasheet	2SC1113 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1113 DESCRIPTION ·High Current Capacity ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 6.
0 A 40 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resi...

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