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2SC1161

Part Number	2SC1161
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1161 DESCRIPTION ·With TO-66 Package ·Low collector saturat...
Datasheet	2SC1161 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1161 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for low frequency high voltage power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 6 V 1.
0 A 15 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYM...

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