NPN Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1507
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 50mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in line-o...
Similar Datasheet
