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2SD2021

INCHANGE

NPN Transistor


Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2021 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications A...



INCHANGE

2SD2021

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