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2SK3798

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor 2SK3798，I2SK3798 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.5Ω. ·Enhancement mode: Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL...

INCHANGE

2SK3798 PDF File

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