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7N60

Part Number	7N60
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 30, 2020
Detailed Description	isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source V...
Datasheet	7N60 PDF File

Overview

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.
4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.
4 A IDM Drain Current-Single Plused 29.
6 A PD Total Dissipation @TC=25℃ 142 W Tj M...

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