Power-Transistor
Description
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
250 V 20 mW 64 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target a...
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