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IPP126N10N3

INCHANGE
Part Number IPP126N10N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP126N10N3，IIPP126N10N3 ·FEATURES ·Static drain-source on-resi...
Datasheet PDF File IPP126N10N3 PDF File

IPP126N10N3
IPP126N10N3

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP126N10N3，IIPP126N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.
6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 58 IDM Drain Current-Single Pulsed 232 PD Total Dissipation @TC=25℃ 94 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·...


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