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IPW60R099CP

Part Number	IPW60R099CP
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 2, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099CP IIPW60R099CP ·FEATURES ·Static drain-source on-resi...
Datasheet	IPW60R099CP PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099CP IIPW60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 93 PD Total Dissipation @TC=25℃ 255 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) ...

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