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IPP60R360P7

INCHANGE

N-Channel MOSFET


Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP60R360P7,IIPP60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.36Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET wit...



INCHANGE

IPP60R360P7

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