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IRFU120

Part Number	IRFU120
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 6, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFU120 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.27Ω ·Enhancement mode ...
Datasheet	IRFU120 PDF File

Overview

isc N-Channel MOSFET Transistor IRFU120 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
27Ω ·Enhancement mode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power factor correction ·Switched mode power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.
7 IDM Drain Current-Single Pulsed 31 PD Total Dissipation @TC=25℃ 42 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case ...

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