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STP45N10F7

INCHANGE

N-Channel MOSFET


Description
Isc N-Channel MOSFET Transistor STP45N10F7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Sour...



INCHANGE

STP45N10F7

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