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IPD036N04LG

Infineon
Part Number IPD036N04LG
Manufacturer Infineon
Description Power-Transistor
Published Oct 8, 2020
Detailed Description Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Datasheet PDF File IPD036N04LG PDF File

IPD036N04LG
IPD036N04LG

Overview
Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant Type IPD036N04L G • Pb-free plating; RoHS compliant Product Summary V DS R DS(on),max ID IPD036N04L G 40 V 3.
6 mΩ 90 A Package Marking PG-TO252-3 036N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=90 A, R GS=25 Ω Value Unit 90 A 87 90 75 400 90 55 mJ ±20 V Rev.
1.
0 page 1 2007-12-06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 IPD036N04L G Value Unit 94 W -55 .
.
.
175 °C 55/175/56 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - SMD version, device on PCB R thJA minimal footprint - 6 cm² cooling area4) - - 1.
6 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - Gate threshold voltage V GS(th) V DS=V GS, I D=45 µA 1.
2 - Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.
1 -V 2 1 µA V DS=40 V, V GS=0 V, T j=125 °C - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=4.
5 V, I D=90 A - V GS=10 V...


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