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IPD60R280P7

Part Number	IPD60R280P7
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD60R280P7，IIPD60R280P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·E...
Datasheet	IPD60R280P7 PDF File

Overview

isc N-Channel MOSFET Transistor IPD60R280P7，IIPD60R280P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for a wide variety of applications and power ranges ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 53 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER R...

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