isc N-Channel MOSFET Transistor
IPP60R600P7,IIPP60R600P7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with
excellent ease of use
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