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IRF5305

Part Number	IRF5305
Manufacturer	INCHANGE
Description	P-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancem...
Datasheet	IRF5305 PDF File

Overview

isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -31 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 110 Tj Max.
Operating Junction Temp...

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