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IRF9530N

INCHANGE
Part Number IRF9530N
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhance...
Datasheet PDF File IRF9530N PDF File

IRF9530N
IRF9530N

Overview
isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 IDM Drain Current-Single Pulsed -56 PD Total Dissipation @TC=25℃ 79 Tj Max.
Operating Junction Temp...


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