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IRFB4620

Part Number	IRFB4620
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFB4620，IIRFB4620 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤72.5mΩ ·Enha...
Datasheet	IRFB4620 PDF File

Overview

isc N-Channel MOSFET Transistor IRFB4620，IIRFB4620 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤72.
5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 25 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 144 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMA...

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