DatasheetsPDF.com

IRFP2907

Part Number	IRFP2907
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFP2907，IIRFP2907 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.5mΩ ·Enhanc...
Datasheet	IRFP2907 PDF File

Overview

isc N-Channel MOSFET Transistor IRFP2907，IIRFP2907 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.
5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 209 IDM Drain Current-Single Pulsed 840 PD Total Dissipation @TC=25℃ 470 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case ...

Similar Datasheet

IRFP2907 Power MOSFET - International Rectifier
IRFP2907 N-Channel MOSFET - INCHANGE
IRFP2907B HEXFET Power MOSFET - International Rectifier
IRFP2907PBF Power MOSFET - International Rectifier
IRFP2907Z AUTOMOTIVE MOSFET - International Rectifier
IRFP2907Z N-Channel MOSFET - INCHANGE
IRFP2907ZPBF Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)