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SPP20N60C3

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor SPP20N60C3，ISPP20N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ...

INCHANGE

SPP20N60C3 PDF File

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