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FCPF11N60NT

Part Number	FCPF11N60NT
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 24, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Sta...
Datasheet	FCPF11N60NT PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 10.
8 Tc=100℃ 6.
8 A IDM Drain Current-Single Pulsed 32.
4 A PD Total Dissipation 32.
1 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS...

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