DatasheetsPDF.com

IRF3711S

Part Number	IRF3711S
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 29, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRF3711S ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·Drain...
Datasheet	IRF3711S PDF File

Overview

isc N-Channel MOSFET Transistor IRF3711S ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 20V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS .
·High Frequency Synchronous Buck Converters for Computer Processor Power.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 20 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 110 A ID(puls) Pulse Drain Current 440 A Ptot Total Dissipation 120 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·T...

Similar Datasheet

IRF3710 N-Channel Power MOSFET - nELL
IRF3710 N-Channel MOSFET Transistor - Inchange Semiconductor
IRF3710 Power MOSFET - International Rectifier
IRF3710L Power MOSFET - International Rectifier
IRF3710L N-Channel MOSFET - INCHANGE
IRF3710LPBF Power MOSFET - International Rectifier
IRF3710PbF HEXFET Power MOSFET - International Rectifier
IRF3710S Power MOSFET - International Rectifier
IRF3710S N-Channel MOSFET - INCHANGE
IRF3710SPBF Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)