isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤50mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain...
