N-Channel MOSFET
Description
iscN-Channel MOSFET Transistor
TK4R4P06PL
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 4.4mΩ (MAX) (VGS = 10 V) ·Enhancement mode:
Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(T...
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