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IXTH50P10
P-Channel MOSFET
Description
isc P-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 55mΩ@VGS= -10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATI...
INCHANGE
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