DatasheetsPDF.com

IXTP50N20P

Part Number	IXTP50N20P
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 19, 2020
Detailed Description	isc N-Channel MOSFET Transistor IXTP50N20P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 60mΩ ·Fully charact...
Datasheet	IXTP50N20P PDF File

Overview

isc N-Channel MOSFET Transistor IXTP50N20P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 60mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 360 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~125 UNIT V V A A W ℃ ℃ ·TH...

Similar Datasheet

IXTP50N20P Power MOSFET - IXYS Corporation
IXTP50N20P N-Channel MOSFET - INCHANGE
IXTP50N20PM N-Channel MOSFET - INCHANGE
IXTP50N20PM Power MOSFET - IXYS
IXTP50N25T Trench Gate Power MOSFET - IXYS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)