NPN Transistor
Description
isc Silicon NPN Power Transistor
2SC3588
DESCRIPTION ·Low Collector Saturation Voltage-
VCE(sat)= 0.5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 400V(Min) ·Complement to Type 2SA1400 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high Voltage switching applications
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