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STD12NM50ND

INCHANGE
Part Number STD12NM50ND
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 5, 2020
Detailed Description isc N-Channel MOSFET Transistor STD12NM50ND FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50...
Datasheet PDF File STD12NM50ND PDF File

STD12NM50ND
STD12NM50ND

Overview
isc N-Channel MOSFET Transistor STD12NM50ND FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max.
Operating Junction Temperature Storage Temperature VALUE UNIT 500 V ±25 V 11 A 44 A 100 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL ...


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