N-Channel MOSFET
Description
iscN-Channel MOSFET Transistor
IRFP21N60L
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.32Ω (MAX) ·Enhancement mode:
Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO...
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