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IRLIZ34G

INCHANGE
Part Number IRLIZ34G
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 15, 2020
Detailed Description iscN-Channel MOSFET Transistor IRLIZ34G ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤50mΩ @VGS=5V ·Enhancement ...
Datasheet PDF File IRLIZ34G PDF File

IRLIZ34G
IRLIZ34G

Overview
iscN-Channel MOSFET Transistor IRLIZ34G ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤50mΩ @VGS=5V ·Enhancement mode: Vth = 1.
0 to 2.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±10 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation @TC=25℃ 42 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARA...


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