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FIR80N075P

First Semiconductor

N-Channel Power MOSFET


Description
N-Channel Enhancement Mode Power MOSFET General Description The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features ƽ VDS=75V;ID=80A@ VGS=10V; RDS(ON)<8mΩ @ VGS=10V ƽ Special process technology for high ESD c...



First Semiconductor

FIR80N075P

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