Dual N-Channel MOSFET
Description
HM
Dual N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
●VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V
Schematic diagram
● High density ...
Similar Datasheet